非晶调制多层膜Nb／Si中的互扩散研究  

STUDY THE INTERDIFFUSION IN AMORPHOUS Nb/Si MULTILAYER

作　　者：张明[1] 于文[1] 张君[1] 张远仪 王文魁[1,2] 

机构地区：[1]中国科学院物理研究所 [2]中国科学院国际材料物理中心

出　　处：《物理学报》1996年第10期1724-1728,共5页Acta Physica Sinica

摘　　要：利用原位Ｘ射线衍射技术得到非晶调制多层膜Ｎｂ／Ｓｉ中的互扩散系数与退火温度的关系，调制周期Ｌ＝３２ｎｍ的非晶调制多层膜是用粒子溅射方法制备的．温度范围为４２３—５２３Ｋ的有效互扩散系数通过原位测量多层膜的一级调制峰强度与退火温度之间的关系而得到．利用缺陷陷阱延迟扩散机制解释了所得到的扩散系数与退火温度的关系．The amorphous Nb/Si multilayers were prepared for the interdiffusion study. The temperature dependent effective interdiffusion at low temperature in amorphous Nb/Si multilayer was obtained using in situ XRD technique. The smaller pre exponential factor for diffusion coefficient in amorphous Nb/Si multilayer is explained by the trap retarded diffusion mechanism. In this model ,the atomic vibration frequency ν is substituted by the average characteristic atomic vibration frequency because of the presence of defect traps.

关 键 词：铌/硅 互扩散 多层 薄膜 非晶调制 

分 类 号：O484.3[理学—固体物理]