基于3单元模型的怀特电路特性  

Model of 3-Mesh White Circuit

作　　者：齐欣[1] 徐中雄[1] 

机构地区：[1]中国科学院高能物理研究所加速器中心,北京100049

出　　处：《原子能科学技术》2006年第4期475-479,共5页Atomic Energy Science and Technology

摘　　要：文章基于3个单元的怀特电路模型,重点分析了回路中各个部件对系统特性的影响。结果表明,谐振电抗器的互感系数的不一致性将激励寄生频率,从而在每个谐振电抗器与电容支路中产生寄生电流,并导致磁铁电流的畸变。在理论分析基础上提出了电源及谐振部件的设计原则。Based on the model of 3-mesh White circuit, the effects of each part of circuit on the system characteristic were analyzed. The imperfection mutual inductance will excite spurious frequency, and create circulating currents in each choke/capacitor branch, therefore cause magnet current distortion. The main design principle of the power supply and the resonant components were described on the basis of theoretical analysis.

关 键 词：怀特电路 谐振电抗器 互感系数 寄生频率 

分 类 号：TL503.5[核科学技术—核技术及应用]