太阳能级硅粉在等离子体中纯化研究  

A study of purity of solar-grade silicon powder in plasma

作　　者：陈政强[1] 王敬义[2] 陶甫廷[1] 

机构地区：[1]广西工学院电子信息与控制工程系,广西柳州545006 [2]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《广西工学院学报》2006年第2期1-4,8,共5页Journal of Guangxi University of Technology

基　　金：国家自然科学基金资助项目(10265002)

摘　　要：给出了本研究中所采用工业硅的要求和太阳电池功率高达14%的P型硅材料中单一杂质的阀值。针对太阳能级硅的纯化要求和工业硅的特性,提出了等离子体对硅粒“刻蚀提纯”的新概念。增加鞘层厚度将使硅粉浸泡于高动能离子中的几率增加,钝化效应消失从而达到提高纯化速率的目的。所研制的新型纯化系统能够满足硅粒自旋、长沉降时间和重复纯化的条件,所给出的工艺参数能满足鞘层宽、离子浓度高的要求。实验结果显示这种新的提纯方法可望用于太阳能级硅的制备。The requirements of raw materials （MG-Si） used in this study and the thresholds of single impurity in P-type solar cells up to 14% efficiency are given in the paper. The new conception of plasma etching purity for silicon particulates is put forward which is directed against the purity requirements of solar-grade silicon and the characteristics of MG-Si. The immersing possibility of silicon in high energy ions will be increased, and the passivation effect will be eliminated as a result of the sheath thickening. The new purity system is established to meet the conditions of particulate spin, drop time of Si particulates, and repeat purity. The technology parameters are provided at last which are satisfied for thicker sheath, and higher density of ion. The experimental results show that this new purity method is to be used for solar-grade silicon.

关 键 词：太阳能级硅 等离子体纯化 粉粒表面刻蚀 鞘区离子动能 

分 类 号：TN304[电子电信—物理电子学]