超薄Au膜的微结构及电学特性  

Microstructure and electrical properties of ultrathin Au films

作　　者：孙兆奇[1] 蔡琪[1] 吕建国[2] 宋学萍[1] 

机构地区：[1]安徽大学物理与材料科学学院,安徽合肥230039 [2]安徽教育学院物理与电子工程系,安徽合肥230061

出　　处：《功能材料》2006年第8期1246-1248,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(59972001);安徽省自然科学基金资助项目(01044901);安徽省人才专项基金资助项目(2004Z029);安徽大学人才队伍建设基金资助课题(05025103)

摘　　要：用直流磁控溅射在室温Si基片和载玻片上制备了厚度为7．6～81．3nm超薄Au膜，用X射线衍射及数字电桥对薄膜的微结构和电学性质进行了测试分析。微结构分析表明：制备的超薄Au膜仍为面心立方多晶结构；在膜厚d〈46．3nm时，（111）晶粒平均晶粒尺寸随膜厚增加逐渐增大，当d〉46．3nm后，晶粒尺寸几乎保持不变，甚至有所减小；（220）晶粒的平均晶粒尺寸则总是随膜厚的增加而增大。薄膜晶格常数均比PDF标准值（0．4078nm）稍小，随膜厚增加，薄膜晶格常数由0．4045nm增大到0．4077nm。电阻率分析结果表明，随着膜厚的增加，薄膜的电阻率经历了岛状膜的极大-网状膜的急剧减小-连续膜的缓慢减小。膜厚d〉46．3nm后，由于薄膜中长出新的（111）小晶粒，电阻率略有增加。Au films with different thicknesses from 7.6-81.3nm were prepared by DC sputtering deposition and analyzed by X-ray diffraction and digital electric bridge. Microstructure analysis shows that the films are made up of fcc-Au nanoparticles. With in d〈46. 3nm region, crystallite size of （111） increases with thickness, whereas within d〉46.3nm, crystallite size of （111） remains about the same （or slightly lower in certain cases）. Crystallite size of （220） always increases with film thickness. Lattice constant of the films increases from 0. 4045-0.4077nm with increasing film thickness. The electric analysis shows that in d〈46.3nm region, resis- tivity of the films decreases with thickness, whereas in d〉46.3nm, resistivity of the films slightly increases with thickness because of the appearance of small （111） crystallite.

关 键 词：超薄Au膜 微结构 电阻率 

分 类 号：O484[理学—固体物理]