脉冲偏压电弧离子镀鞘层尺度演化的特性与分析  

CHARACTERISTICS AND ANALYSIS OF THE SHEATH SCALING EVOLUTION IN PULSED BIAS ARC ION PLATING

作　　者：戚栋[1] 王宁会[1] 林国强[2] 董闯[2] 

机构地区：[1]大连理工大学电气工程系,大连116024 [2]大连理工大学三束材料改性国家重点实验室,大连116024

出　　处：《金属学报》2006年第8期861-864,共4页Acta Metallurgica Sinica

基　　金：国家高技术研究发展计划资助项目2002AA302507

摘　　要：基于一维平板鞘层模型,建立了脉冲偏压电弧离子镀(PBAIP)鞘层随时间演化的动力学模型,给出了其解析表达式,并结合PBAIP工艺中等离子体参数的测量结果,模拟分析了PBAIP鞘层的厚度和鞘层中的离子流密度随时间的演化规律及其受脉冲偏压幅度等参数的影响．结果表明：在PBAIP工艺中,稳态鞘层的厚度及形成稳态鞘层的时间均远小于已报道的等离子体源注入(PSII)等鞘层对应的值；PBAIP鞘层的扩展几乎是实时跟随脉冲偏压的变化,脉冲偏压下每一时刻的鞘层厚度与对应直流偏压下的鞘层厚度几乎相等．Based on a one-dimensional planar sheath model, the kinetic model of pulsed bias arc ion plating （PBAIP） sheath according to temporal evolvement and its analytic expression are presented. Combining the measured results of plasma parameters in PBAIP process, the temporal evolvement disciplinarian of the thickness of PBAIP sheath and ion current density in the sheath, and the effect of pulsed bias magnitude on sheath thickness and ion current are simulated and analyzed. The results indicate that both the thickness of stable-state sheath and the time of sheath formation are far less than the values reported by plasma source ion implantation （PSII）. The expanding of the PBAIP sheath almost follows the real-time change of pulsed bias voltage, and the sheath thickness under pulsed bias voltage nearly equals to that under DC bias voltage.

关 键 词：脉冲偏压电弧离子镀(PBAIP) 鞘层 演化 数值模拟 

分 类 号：O539[理学—等离子体物理] O411[理学—物理]