共蒸发三步法制备CIGS薄膜的性质  

Properties of CIGS Thin-Films Prepared by a Three-Stage of Co-Evaporation Process

作　　者：敖建平[1] 孙云[1] 王晓玲[1] 李凤岩[1] 何青[1] 孙国忠[1] 周志强[1] 李长健[1] 

机构地区：[1]南开大学光电子薄膜器件与技术天津市重点实验室,光电信息技术重点实验室(南开大学,天津大学),天津300071

出　　处：《Journal of Semiconductors》2006年第8期1406-1411,共6页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2004AA513021);南开大学基金(批准号:P02011;P02010)资助项目~~

摘　　要：采用PID温度控制器控制共蒸发设备中蒸发源及衬底加热的温度,以三步法工艺制备CIGS(Cu(In,Ga)Se2)薄膜,通过恒功率加热衬底测试温度的变化,可实现在线组分监测,得到CIGS薄膜的组成重现性很好.CIGS薄膜的表面光洁,粗糙度多数小于10nm.但是组成相同的CIGS薄膜,其结晶择优取向可能不同,主要有(112)和(220)/(204)两种;其结晶形貌也有很大的不同,晶粒粗大且成柱状的薄膜电池效率高,虽然从Cu/(In+Ga)<1的组成可以认为CIGS薄膜为贫Cu结构,但Hall测试多数CIGS薄膜呈p型,少数呈n型.CIGS thin films are deposited in a three-stage co-evaporation process by using a simple PID controller. The composition of the CIGS thin films can be controlled on-line by monitoring the temperature change of the substrates while using constant power to heat the substrates. These methods can greatly improve the controllability and reproducibility of depositing CIGS thin films. The surfaces of the CIGS films are smooth, with a roughness less than 10nm. However, the preferential orientations of the CIGS thin films with the same component are different, though most of them are （112）. Moreover,the grain sizes of the CIGS thin films are also very different. Although the CIGS films have Cu-poor compositions,Cu/（In ＋ Ga）〈1, most of them are p-typo semiconductors, and a few are n-type, as determined by Hall measurement.

关 键 词：共蒸发 Cu(In Ga)Se2(CIGS) 三步法工艺 薄膜太阳电池 

分 类 号：TN304.05[电子电信—物理电子学]