MgO薄膜的制备和二次电子发射性能的表征  

Inexpensive Fabrication and Secondary Electron Emission Property of MgO Films

作　　者：殷明志[1] 姚熹[2] 

机构地区：[1]西北工业大学应用化学系,陕西西安710072 [2]西安交通大学电子材料及器件研究所,陕西西安710049

出　　处：《西北工业大学学报》2006年第4期435-439,共5页Journal of Northwestern Polytechnical University

基　　金：国家重点基础研究发展计划(2002CB613305)资助

摘　　要：以无机盐为原料,用溶胶-凝胶技术在S i(111)衬底上制备(100)取向M gO薄膜。镁硝酸盐的冰醋酸溶液加热回流转化形成的M g(CH3COO)2,与乙酰丙酮(A cA c)分子形成环状螯合物M g(CH3COO)2-x(A cA c)x可抑制M g2+离子的过度水解,经水解形成的M g(OH)2-x(A cA c)x羟基聚合形成镁的羟基簇状结构溶胶。丙三醇(GL)防止羟基镁过度聚合,聚乙烯醇(PVA)分子中强极性基团-OH和金属离子螯合或化学吸附,使镁的羟基簇状结构溶胶具有线状或网状结构,易于成膜。有机添加剂也会使M gO薄膜在热处理过程的热应力因薄膜塑性增强而降低。文中对形成的M gO薄膜的微结构、形貌等进行了分析,通过M gO薄膜二次电子发射系数γ值的测定,反馈M gO薄膜的性能,为提高PDP(p lasm a d isp lay panels)性能提供依据。The major aim is to search for an inexpensive but effective way of fabricating MgO films. The minor aim is the determination of secondary electron emission property of such films needed for ensuring the quality of PDP（plasma display panel） to be made in China. （100） oriented MgO films on Si（111） substrate were successfully prepared by using sol-gel process of magnesium inorganic salt. Mg（NO3）2· 6H2O glacial acetic acid solution was changed into Mg（CH3COO）2 by refluxing in anhydrous solvent, and acetylacetone （AcAc） was partially bidentated with metallic ion of the Mg （CH3COO）2 to form Mg（CH3COO）2-x （AcAc）x, which was hydrolyzed and clustered ; Poly （vinylalcohol） （PVA）, complexing or adhering with hydroxylated-Mg-clusters, made the MgO sol precursor polymeric and filmy easily. The gel MgO films were crystallized after being annealed above 750℃/60 rain and no other preferred orientation than （100） was detected. The MgO（100） feature can be explained by the nucleation mechanism as internal nucleation. Fig. 5 in the full paper shows the two curves of variation of γ coefficient of secondary electron emission property with E/p, corresponding respectively to annealing temperatures of 750℃ and 850℃. The properties are quite close to the curves determined for MgO films fabricated by pulsed laser deposition or rf-magnetron sputtering.

关 键 词：溶胶-凝胶法 MgO薄膜 二次电子发射 

分 类 号：O612.2[理学—无机化学] TM215[理学—化学]