HgCdTe光伏器件多层钝化膜等离子体处理的研究  

Study of plasma treatment on multi-layer film for HgCdTe photovoltaic detector

作　　者：储开慧[1] 乔辉[1] 汤英文[1] 陈江峰[1] 胡亚春[1] 贾嘉[1] 李向阳[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术联合国家重点实验室,上海200083

出　　处：《光学仪器》2006年第4期56-59,共4页Optical Instruments

摘　　要：在HgCdT e光伏探测器件S iO2+ZnS复合介质膜钝化中,引入O+2清洗和A+r刻蚀两种等离子体处理工艺,大大提高薄膜附着力,成功制备出优良的光伏器件。对处理前后的样品进行场发射扫描电子显微镜扫描、原子力显微镜扫描和二次离子质谱测试后发现,O+2清洗对去除样品表面的残余光刻胶效果显著;而A r+刻蚀使ZnS表面更为粗糙,增加了成核中心,使S iO2和ZnS表面互相渗透,增强了两层介质膜的附着力。SiO2＋ZnS multi-layer film is often used for HgCdTe photovoltaic detector. But this kind of passivation is likely to have adhesion problem. By the introduction of O2^＋ cleaning and Ar^＋ etching into the preparation, the adhesion problem can be solved. It is clearly showed that most of residual photoresist can be removed after O2^＋ cleaning. It is also indicated that Ar^＋ etching process is helpful for ZnS surface coarsening and nucleation to form the mixing interface between SiO2 and ZnS films and thus improve the adhesion of these two dielectric films.

关 键 词：O2^+清洗 Ar^+刻蚀 钝化 HGCDTE光伏探测器 

分 类 号：TN304.2[电子电信—物理电子学]