沉积参数对碳氮化硅薄膜化学结构及光学性能的影响  

The influence of deposition parameters on chemical structure and optical properties of silicon carbonitride film

作　　者：朴勇[1] 梁宏军[2] 高鹏[1] 丁万昱[1] 陆文琪[1] 马腾才[1] 徐军[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,大连116024 [2]西安通信学院数理教研室,西安710106

出　　处：《应用光学》2006年第4期274-280,共7页Journal of Applied Optics

基　　金：国家自然科学基金(批准号:60576022;50572012和50390060)资助课题

摘　　要：利用微波电子回旋共振（MW-ECR）等离子体增强非平衡磁控溅射法制备了碳氮化硅（SiCN）薄膜。研究结果表明：硅靶溅射功率和氮气流量对薄膜化学结构、光学、力学等性能有很大影响。傅里叶变换红外光谱（FT-IR）和X射线光电子能谱（XPS）表征显示,随着硅靶溅射功率由150W增加到 350 W,薄膜中C-Si-N键含量由14.3%增加到43.6%;氮气流量的增大（2～15 sccm）易于形成更多的sp2C=N键和sp1C≡N键.在改变硅靶溅射功率和氮气流量的条件下,薄膜光学带隙最大值分别达到2.1 eV和2.8 eV。Silicon resonance plasma carbonitride （SiCN） films were prepared with microwave electron cyclotron enhanced unbalance magnetron sputtering technique （MW-ECR PEUMST）. FT-IR and XPS characterization results indicate that the amount of C-Si-N sub-chemical structure in deposited film increases from 14.3 % to 43.6%, when the silicon target sputtering power increases from 150 W to 350 W. Moreover, larger N2 gas flow rate is beneficial to the formation of sp^2C=N and sp^1C=N chemical structure. The optical gap of deposited SiCN films deduced from the Tauc method shows that the maximum optical gap of 2.8 eV can be obtained when the silicon target sputtering power is 300 W, the carbon target sputtering voltage is 600 V and the N2 gas flow rate is set at 6sccm.

关 键 词：SiCN薄膜 微波ECR等离子体 沉积参数 光学带隙 

分 类 号：O484.1[理学—固体物理] O484.41[理学—物理]