化学镀银过程硅表面催化性质对镀膜成核的研究  

The impact of catalysis of silicon surface on the formation of silver film in electroless silver deposition

作　　者：佟浩[1] 叶为春[2] 常彦龙[2] 王春明[2] 力虎林[1,2] 

机构地区：[1]南京航空航天大学材料科学与技术学院 [2]兰州大学化学化工学院,甘肃兰州730000

出　　处：《兰州大学学报（自然科学版）》2006年第4期79-85,共7页Journal of Lanzhou University(Natural Sciences)

基　　金：江苏省博士后科研资助计划(2005255)资助项目.

摘　　要：在单晶硅表面用化学镀的方法制备了纳米级的银催化晶籽层,利用开路电位时间曲线(OCPT)的变化情况监测了硅表面银晶籽的生长过程．研究表明在有Ag+离子存在的溶液中加入HF后的瞬间,银晶籽即在硅表面形成,且在5s内完全达到覆盖．用OCP-T对刻蚀硅片与银晶籽活化后的硅片在化学镀溶液中的成核情况进行了研究,并结合原子力显微镜与傅立叶红外反射对活化前后的表面经化学镀覆银的情况进行了对比,结果表明用银晶籽层活化的硅片表面具有良好的催化活性,在其上经化学镀银后所得到的薄膜表面平滑度高、致密性好．The nanometer sized silver seed layer on silicon surface was fabricated by electroless method. The formation process was monitored by the open circuit potential with time（OCP-T） method. The results indicate that the silver seed forms on silicon surface as soon as the addition of the HF into the Ag^＋ solution, totally covering the surface within 5 second. The etched silicon and silver seed activated silicon surface during the electroless silver plating process were studied by OCP-T method. Compared with the atomic force microscopy and Fourier transform infrared spectrometry, the silver activated silicon surface during the electroless silver plating presents a smoother and condenser surface than etched silicon surface.

关 键 词：化学镀 开路电位 硅 晶籽 

分 类 号：O647.2[理学—物理化学]