纳米永磁晶粒边界类磁畴壁的形成与剩磁增强效应  

Formation of Domain-wall Like Structure and Remanence Enhancement Effect in Nano-structured Permanent Magnets

作　　者：梁军[1] 赵国平[1] 孙明俊[1] 

机构地区：[1]四川师范大学物理与电子工程学院固体物理研究所,四川成都610066

出　　处：《磁性材料及器件》2006年第3期37-39,共3页Journal of Magnetic Materials and Devices

摘　　要：纳米永磁晶粒之间的交换耦合相互作用导致在晶界处形成一种类磁畴壁结构的过渡区域。假设过渡区内的磁矩在方向上呈线性分布,由总能量取极小值的条件得到过渡区的宽度和剩磁的解析公式,能够很好地解释各向同性纳米磁体的剩磁增强效应。A transition region with domain-wall like structure is formed in the grain boundary due to the exchange-coupling interaction between neighboring grains in nano-structured magnets. The magnetic moment distribution in the transition region is determined by the minimization of the total energy. It is found that a simple linear estimation is good enough to calculate the width of the transition region. The derived analytical formulae of remanence can explain the remanence enhancement effects observed in such materials.

关 键 词：纳米磁体 类磁畴结构 剩磁增强效应 解析公式 

分 类 号：TM271.3[一般工业技术—材料科学与工程] O482.5[电气工程—电工理论与新技术]