Bi_4Ti_3O_(12)掺杂中温烧结(Ba,Sr)TiO_3基电容器陶瓷  

A Study on Bi_4Ti_3O_(12)-Doped Sintered at Medium Temperature (Ba,Sr)TiO_3 Series Capacitor Ceramics

作　　者：高春华[1] 黄新友[1] 陈志刚[1] 陈祥冲[1] 黄国军[1] 

机构地区：[1]江苏大学材料科学与工程学院,江苏镇江212013

出　　处：《稀有金属材料与工程》2006年第A02期213-215,共3页Rare Metal Materials and Engineering

摘　　要：研究了Bi4Ti3O12掺杂量(≥8％,质量分数)对(Ba,Sr)TiO3(Barium Strontium Titanate,BST)铁电电容器陶瓷介电性能的影响,得到不同Bi4Ti3O12掺杂量与BST陶瓷性能的关系,得到中温烧结(≤1150℃)、高压(≥6．99 MV／m)、低损耗(0．008)、符合X7R特性的多层陶瓷电容器瓷料。借助扫描电镜(SEM)研究了Bi4Ti3O12对BST陶瓷微观结构的影响,探讨了Bi4Ti3O12掺杂量对BST陶瓷性能和结构影响机理。结果表明:Bi4Ti3O12是通过与BST形成核-壳结构、形成玻璃相、偏析晶界及抑制晶粒生长、改善介温特性等来影响瓷料性能和结构的。这些结果为Bi4Ti3O12掺杂改性BST电容器陶瓷提供一定的依据。The influence of doping amount of Bi4Ti3O12 （more than 8%, mass fraction） on the properties of （Ba,Sr）TiO3（barium strontium titanate,BST） series ferroelectric capacitor ceramics were investigated, and the relationship between the additive amount of Bi4Ti3O12 and the properties of BST were obtained. The multilayer ceramics sintered at 1150℃ were obtained, the withstand voltage of the ceramics was more than 6.99 MV/m, the dielectric loss was 0.008 and the dielectric temperature property was suited for X7R character. The influence of additive amount of Bi4Ti3O12 on the microstructure of BST ceramics were studied by scanning electron microscope（SEM）. The influence mechanism of Bi4Ti3O12 additive amount on the properties of the BST ceramics was discussed. The results show that Bi4Ti3O12 additive has an influence on the properties and structure of BST ceramics due to forming ＂Core-Shell＂ structure, forming glass phase, segregating in crystal boundary, stopping grain growth, improving dielectric temoerature property, and so on. These results provide the basis for Bi4Ti3O12 additive modifying BST series capacitor ceramics.

关 键 词：中温烧结 电容器陶瓷 钛酸钡锶 陶瓷 钛酸铋 

分 类 号：TQ174.1[化学工程—陶瓷工业]