有机先驱体法制备SiBONC陶瓷的高温性能及析晶过程  被引量:1

Thermal Stability and Crystallization Process of SiBONC Ceramics Derived from Polymeric Precursors

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作  者:李峰[1] 温广武[1] 韩兆祥[1] 

机构地区:[1]哈尔滨工业大学,黑龙江哈尔滨150001

出  处:《稀有金属材料与工程》2006年第A02期228-231,共4页Rare Metal Materials and Engineering

基  金:国家自然科学基金资助(50472011)

摘  要:通过有机聚合物先驱体法使用四氯化硅(SiCl4)、苯甲醛(PhCHO)、烷基胺(RNH2)、三氯化硼(BCl3)为原料,对SiO2基陶瓷进行了B,C,N的原子级掺杂,并用裂解制备的纳米陶瓷粉体热压烧结制备了一种硅基复合陶瓷。在气氛烧结炉中对粉体及块体材料的热稳定性及析晶情况进行研究。粉体及块体陶瓷材料在1700℃时仍保持非晶态,其析晶温度在1800℃以上,析出的上要物相为纳米级的SiC颗粒及少量BN,其质量损失率在1900℃时为4%左右。B,C,N的原子级掺杂有效的提高了硅基陶瓷的热稳定性和硅基陶瓷的析晶温度,由于纳米SiC颗粒的析出使SiO2基陶瓷的高温力学性能得到了提高。SiBONC ceramic precursor was synthesized from raw materials of silicon tetrachloride, phenyle aldehyde, boron trichloride and aniline and subsequently transformed into ceramic nano-powder by pyrolysis up to 1000℃. And then the nano-powder was hot-pressed to form the SiBONC ceramics. The decomposition properties and crystallization of amorphous precursor-derived SiBONC ceramics and powders were investigated in gas pressure furnace. The bulk ceramics and powder could keep amorphous state even at 1700℃, and the crystallization temperature was above 1800℃, the main phase was SiC and some BN, the mass loss rate was 4% at 1900℃. Doping of B, C, N can raise the thermal stability and crystallization temperature, at the same time, the high-temperature mechanical properties can be also raised because of precipitating of the nanometer SiC particles.

关 键 词:先驱体 有机聚合物 热稳定性 析晶 

分 类 号:TQ174[化学工程—陶瓷工业]

 

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