解析式表示外腔半导体激光器的特征参量  

Analytical expressions for characteristic parameters of external cavity semiconductor lasers

作　　者：周小红[1] 陈建国[1] 李大义[1] 卢玉村[1] 吴正茂[1] 夏光琼 

机构地区：[1]四川大学,西南师范大学

出　　处：《半导体光电》1996年第4期317-322,共6页Semiconductor Optoelectronics

摘　　要：用射线法研究了强反馈可调谐外腔式半导体激光器（ＥＣＬＤ）的阈值行为，导出了ＥＣＬＤ被调在不同波长振荡所需的阈值载流子数密度、外腔长度及阈值电流的解析表达式，也得到了不同电流下ＥＣＬＤ的调谐输出功率及载流子密度的表达式。此外，对于如何结合光谱与载流子速率方程以便得到自洽解也作了简单的介绍。Ray trace method has been used to study the threshold acts of the strong feedback tuned external cavity semiconductor lasers (ECLD).Explicit analytical expressions have been deduced for the required threshold carrier density,hreshold current and the length of the external cavity when the ECLD is tuned to oscillate at the required wavelengths.In addition,the expressions of the carrier density and tuned output power of the ECLD have also been obtained at different currents. An account of the derivation of the carrier density self-consistently has been given by combining the spectrum with the carrier rate equations.

关 键 词：半导体激光器 阈值 特征参量 

分 类 号：TN248.4[电子电信—物理电子学]