AlGaAs湿法氧化的热稳定性研究  

The Study on Thermal Stability of AlGaAs Wet Oxidation

作　　者：董立闽[1] 郭霞[1] 渠红伟[1] 邹德恕[1] 廉鹏[1] 邓军[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院北京市光电子技术实验室,北京100022

出　　处：《激光与红外》2006年第9期871-873,共3页Laser & Infrared

基　　金：国家自然科学基金资助项目(No.69889601);国家"863"高技术计划资助项目(No.2002AA312070)

摘　　要：文中针对A lGaAs湿法氧化后器件热稳定性变差,导致性能下降的问题进行了研究。对不同氧化条件下样品的热稳定性进行了比较,证明采用降低炉温、延长氧化时间以及经过预加热处理等方法可以有效提高器件的热稳定性。利用拉曼谱分析了A lGaAs湿法氧化技术中影响热稳定性的因素,认为器件的热稳定性在一定程度上取决于湿法氧化生成物中挥发性产物含量的多少。The effect of wet oxidization of the Al0. 98 Ga.0.02 As layer on the thermal stability of devices has been studied in different oxidation conditions. A significant improvement in thermal stability of the oxidized Al0.98 Ga.0.02 As layer has been achieved by lowing the oxidation temperature, prolong the oxidation time and preheating the samples before the oxidation, which can be used to fabricate reliable devices. The thermal stability is strongly related to the removal of volatile products as evidenced by the Raman spectroscopy.

关 键 词：垂直腔面发射激光器 ALGAAS 湿法氧化 热稳定性 

分 类 号：TN305.5[电子电信—物理电子学] TN248.4