等离子体隐身技术的WKB方法  

The WKB Method of Plasma Stealth Technology

作　　者：吴评[1] 刘少斌[1] 

机构地区：[1]南昌大学理学院,江西南昌330047

出　　处：《南昌大学学报（理科版）》2006年第4期331-337,共7页Journal of Nanchang University(Natural Science)

基　　金：国家自然科学基金资助项目(60471002);江西省自然科学基金资助项目(0412014)

摘　　要：研究了非磁化等离子体的碰撞吸收隐身技术机理。用WKB方法给出了垂直入射、斜入射情况下,非磁化不均匀等离子体密度覆盖导体平板的等离子体对不同频率电磁波的反射系数。给出了不均匀非磁化等离子体密度、等离子体碰撞频率、电磁波频率与碰撞吸收的关系。This paper systematically investigates the collisional absorption of EM-wave by a conductive plane covered with inhomogeneous unmagnetized plasmas. The WKB method is used to calculate the amount of reflection coefficient of a plane wave normally （or obliquely） incident on a conductive plane covered with inhomogeneous unmagnetized plasmas. The relation between collisional absorption of the EM-wave and the plasma density, plasma collision frequency, and incident wave frequency is obtained.

关 键 词：等离子体 雷达散射截面 时域有限差分法 隐身 

分 类 号：TN011[电子电信—物理电子学]