脉冲激光沉积制备ZnO薄膜及其发光性质研究  

Study of Structure and Photoluminescence Properties of the ZnO Thin Film Deposited by Pulse Laser Deposition

作　　者：王璟璟[1] 李清山[1] 陈达[1] 孔祥贵[2] 郑学刚[1] 张宁[1] 赵波[1] 

机构地区：[1]曲阜师范大学物理工程学院 [2]中科院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春130033

出　　处：《光电子．激光》2006年第9期1065-1068,共4页Journal of Optoelectronics·Laser

摘　　要：采用脉冲激光沉积(PLD)技术,在Si(100)衬底上制备出高度c轴取向的ZnO薄膜。通过测量X射线衍射(XRD)谱、扫描电镜(SEM)和光致发光(PL)谱,研究了衬底温度改变对薄膜结构和PL的影响。实验结果表明,当衬底温度从400℃升到700℃时,薄膜的(002)衍射峰半高宽(FWHM)变窄,紫外(UV)发光强度在衬底温度为500℃达到最强。这可能是当衬底温度为500℃时,ZnO薄膜的化学配比较好,说明化学配比对UV发光的影响要大于薄膜微结构的影响。改变衬底温度对薄膜的表面形貌也有较大的影响。The ZnO films with c axis orientation were prepared by pulse laser deposition （PLD） on Si（100） substrate. We had investigated systematically these samples by XRD, SEM and photoluminescence（PL） and the effect of substrate temperature on the structure and optical properties of these samples. In this experiments, the substrate temperature changed from 400℃ to 700℃.The XRD patterns indicate that all films have （002） preferred orientation. And with the substrate temperature increasing,the FWHM of （002） diffraction peak decreases. And the UV intensity is the most strongest at 500 ℃. It is concluded that the UV luminescence intensity strongly depends on the stoichiometry in the ZnO film rather than the micro-structural quality of the crystal. We also find that the substrate temperature has an effect on the morphology of samples.

关 键 词：ZnO 光致发光(PL) 半高宽(FWHM) 脉冲激光沉积(PLD) 

分 类 号：O484[理学—固体物理]