不同过饱和度下DKDP晶体生长和缺陷的研究  

Growth and Defect of DKDP Crystal at Different Supersaturation

作　　者：王波[1] 房昌水[1] 孙洵[1] 王圣来[1] 顾庆天[1] 李毅平[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100

出　　处：《无机材料学报》2006年第5期1047-1052,共6页Journal of Inorganic Materials

基　　金：国家"863"惯性约束核聚变领域资助(59823003);山东优秀中青年奖励基金(03BS079)

摘　　要：过饱和度是影响DKDP晶体生长和质量的关键因素．本文采用“点籽晶”快速生长技术在不同的过饱和度下从氘化程度为75％的溶液中生长DKDP晶体并选取部分样品进行同步辐射X射线形貌术和粉末X射线衍射测试．研究了不同过饱和度下DKDP晶体的生长和缺陷．实验证明,DKDP晶体可以在<4℃的过饱和度下实现快速生长,但晶体的缺陷随着过饱和度的增大而增加．During the process of DKDP crystal growth, supersaturation is the dominating factor which greatly influence the growth and quality of DKDP single crystal. In this paper, DKDP crystal was grown from 75%-deuterated solution by the ＂ point-seed ＂ rapid growth method at different supersaturation. Some specimens of the crystal obtained were tested by synchrotron radiation white beam and XRD. The growth and defects of DKDP crstal at different supersaturation were studied. The results show that DKDP crystal can be grown repidly when the supersaturation is at less than 4℃, and the defects will become more and more with the increase of supersaturation.

关 键 词：DKDP晶体 过饱和度 晶体生长 缺陷 

分 类 号：O734[理学—晶体学]