用于非制冷热释电红外探测器的PZT铁电薄膜研究  

PZT Ferroelectric Thin Film for Uncooled Pyroelectric Infrared Detectors

作　　者：王忠华[1] 李振豪[1] 普朝光[1] 杨培志[1] 林猷慎[1] 

机构地区：[1]昆明物理研究所,昆明650223

出　　处：《无机材料学报》2006年第5期1223-1229,共7页Journal of Inorganic Materials

基　　金：云南省自然科学基金重点项目(2002C0008Z)

摘　　要：采用溶胶-凝胶和射频磁控溅射相结合的方法制备了PZT铁电薄膜．用溶胶-凝胶法制备一层PZT薄膜作为籽晶层,在衬底PZT(seed layer)／Pt／Ti／SiO2／Si上用射频磁控溅射过量10％Pb的Pb(ZrxTi1-x)O3(x=0．3)陶瓷靶生长厚500nm的PZT铁电薄膜．采用在450℃预退火,575℃后退火的快速分级退火方法对PZT铁电薄膜进行热处理．PZT铁电薄膜获得了较好的热释电性能,热释电系数、介电常数、介电损耗和探测度优值因子分别为P=2．3×10-8C·cm-2·K-1,ε=500,tanδ=0．02,Fd=0．94×10-5Pa-0.5．Lead zirconate titanate（PZT） ferroelectric thin films were prepared by both sol-gel and r.f. magnetron sputtering technologies. In order to decrease the crystallization temperature of thin films and improve the probabilities of nucleus, a PZT seed-layer was prepared by using the sol-gel method. The PZT ferroelectric thin films with about 500nm thickness were sputterdeposited from a Pb（ZrxTi1-x）O3（x=0.3） ceramic target containing 10% excess Pb on PZT（seed layer）/Pt/Ti/SiO2/Si substrates. The stepping-annealing with RTP （rapid thermal process） was proposed for thermal treatment of the PZT ferroelectric thin films. The PZT ferroelectric thin film showed good dielectric and pyroelectric properties by pre-annealing at 450℃ for 5min and following post-annealing at 575℃ for 5min. The results of pyroelectric coefficient 2.3×10^-8C.cm^-2.K^-1, relative dielectric constant 500, dielectric loss 0.02, detectivity figure of merit 0.94×10^-5pa^-0.5 were obtained.

关 键 词：非制冷热释电红外探测器 PZT 籽晶层 快速分级退火 

分 类 号：TN304[电子电信—物理电子学] TB43[一般工业技术]