类氦铷、铌离子光电离截面的细致计算  

THE CALCULATION OF LEVEL-LEVEL PHOTOIONIZATION CROSS SECTIONS OF Rb AND Nb IONS

作　　者：李月明[1] 李世昌[1] 韩国兴[1] 

机构地区：[1]北京应用物理与计算数学研究所

出　　处：《强激光与粒子束》1996年第4期556-562,共7页High Power Laser and Particle Beams

基　　金：激光技术青年科学基金;中国工程物理研究院科学技术基金

摘　　要：采用ＨＦ加相对论修正的ＨＦＲ方法，考虑束缚组态间的相互作用，计算了类氦铷与类氦铌离子各能级间跃迁的光电截面，所包括的离子组态为１ｓｎｌ—１ｓεｌ±１（１≤ｎ≤６、０≤ｌ≤ｎ－１），取自由电子能量区间为０～１０倍的离化能，分析了系统计算误差与计算精度，给出了对未态求和及三次样条插值后的结果。Based on the HFR method for bound states and Distorted-Wave method for continuous states, photoionization cross sections that describe level to level transitions of He-like Rb and He-like Nb ions have been calculated.In the calculation,configuration interactions between bound states have been considered.The included configurations of the process are is nl→isεl±1(1≤n≤6,0≤l≤n-1),and the energy range of free electron is 0～10 times the ionization energy. The compututional error and the data accuracy are discussed.Also the results that have been summed over final states are provided.

关 键 词：多组态 自洽场 光电截面 铷 铌 

分 类 号：O614.1[理学—无机化学] O614.512[理学—化学]