Gd和Sn掺杂BaTiO_3陶瓷的介电性能  

Dielectric properties of BaTiO_3 ceramics doped with Gd and Sn

作　　者：常方高[1] 李涛[1] 葛永霞[1] 袁延忠[1] 荆西平[2] 

机构地区：[1]河南师范大学物理与信息工程学院,河南新乡453007 [2]北京大学化学与分子工程学院稀土化学与应用国家重点实验室,北京100871

出　　处：《功能材料》2006年第9期1389-1391,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60571063);留学归国家基金资助项目(教外司留[2005]55)

摘　　要：通过固相反应法制备了掺杂0.5%(摩尔比)Gd和10%(摩尔比)Sn的BaTiO3陶瓷材料,并对样品的介电性能在不同频率、温度下进行了研究。结果表明掺杂之后材料的居里点向低温方向移动,材料的介电常数显著增加。其中同时对BaTiO3的A位掺杂0.5%的Gd,对B位掺杂10%的Sn时,其居里点降至60℃,介电常数在0.005、1、100kHz下的峰值分别达到54000、51000、45000,而对应的tgδ分别为0.053、0.066、0.092。Gd and Sn doped BaTiO3 ceramics were prepared with raw materials BaCO3, TiO2, SnO2 （〉99%） and Gd2O3 （〉99.99%） using standard solid-state reaction method. The dielectric constant and dielectric loss of samples were measured as a function of temperature and frequency. The results show that the effect of Gd and Sn doping is to increase the dielectric constant and to reduce the Curie temperature. BaTiO3 ceramics doped with 3 Gd and 10% Sn have a dielectric constant of 54000 which is much larger than that of the parent material （10000）. The new material may be used for manufacturing small size capacitors with large capacity or positive temperature devices etc.

关 键 词：掺杂 介电常数 介电损耗 居里点 

分 类 号：O656.32[理学—分析化学]