热处理对金属薄膜压阻灵敏度的影响  

The effect of annealing on the piezoresitance response of thin film manganin and ytterbium gages

作　　者：杜晓松[1] 杨邦朝[1] 滕林[1] 宋远强[1] 蒋亚东[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室

出　　处：《功能材料》2006年第9期1426-1428,共3页Journal of Functional Materials

基　　金：国防预研项目资助项目(41323030412)

摘　　要：采用磁控溅射法制备锰铜薄膜,溅射和真空蒸发法制备镱薄膜。对热处理前后薄膜的电学性能、微观形貌和结构进行了表征,并采用轻气炮和对顶砧装置对薄膜传感器进行了压阻性能测试,结果表明热处理后薄膜的压阻系数有很大提高。SEM和XRD的分析表明,压阻系数的提高是由于热处理后薄膜晶粒长大、缺陷减少、电阻率下降所致。敏感薄膜的电阻率与传感器的灵敏度直接相关。热处理后,薄膜压阻计的灵敏度已接近箔式传感器的水平,热处理是提高薄膜压阻计灵敏度的有效手段。Thin film manganin gages and ytterbium gages were fabricated by magnetron sputtering. Meanwhile, ytterbium gages were prepared by vacuum evaporation. The piezoresitance response of the annealed and unannealed gages were calibrated on light gas guns as well as on a anvil apparatus. It was found that the annealed gages were much sensitive to a given applied stress. SEM and XRD characterizations showed that the annealed films had a smooth morphology and a larger grain size. As a result, the decreased initial resistances of the sensing elements after annealing resulted in a higher piezoresistance coefficient. It suggested that the resistivity of the element is a measure for piezoresistance response. The sensitivity of the annealed manganin and ytterbium gages were closed to that of the foil gages. Annealing is an effective way to improve the sensitivity of these gages.

关 键 词：压阻系数 锰铜 镱 薄膜 微观结构 

分 类 号：O521.3[理学—高压高温物理] TB43[理学—物理]