具有高阻抗本征SnO_2过渡层的CdS/CdTe多晶薄膜太阳电池  

Polycrystalline CdS/CdTe thin-film Solar cells with intrinsic SnO_2 films of high resistance

作　　者：曾广根[1] 郑家贵[1] 黎兵[1] 雷智[1] 武莉莉[1] 蔡亚平[1] 李卫[1] 张静全[1] 蔡伟[1] 冯良桓[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《物理学报》2006年第9期4854-4859,共6页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2001AA513010);博士点基金(批准号:20050610024)资助的课题.~~

摘　　要：采用超声喷雾热解法制备了具有高阻抗的本征SnO2透明导电膜,将其运用在CdS层减薄了的CdS/CdTe多晶薄膜太阳电池中,对减薄后的CdS薄膜进行了XRD,AFM图谱分析,并对电池进行了光、暗I-V,光谱响应和C-V测试.结果表明,在高阻膜上沉积的减薄CdS薄膜(111)取向更明显,但易形成微孔.引入高阻层后,能消除CdS微孔形成的微小漏电通道,有效保护p-n结,改善了电池的并联电阻、填充因子和短波响应,使载流子浓度增加,暗饱和电流密度减小,从而电池性能得到改善,电池转换效率增加了14.4%.Intrinsic SnO2 films as the high resistance transparent （HRT） layers are prepared by ultrasonic spray pyrolysis and used in CdS/CdTe solar cells with a thin CdS layer. XRD and AFM are used to study the performance of the thin CdS layers. The illuminated and dark I-V characteristics, spectral response （SR） and C-V characteristics of the devices are measured. The results show that the thin CdS films deposited on HRT layers have an obvious preferred orientation along （111 ） plan. But pinholes are formed when using a thin CdS layer. After introducing the HRT layer, the tunneling leakage caused by the pinholes can be avoided, which effectively protects the p-n junction. Meanwhile, higher shunt resistivity, fill factor, short-wave response, carrier concentration and lower dark saturation current density have been achieved. As a result, the conversion efficiency is enhanced by 14.4% .

关 键 词：CdTe电池 过渡层 效率 

分 类 号：TM914.42[电气工程—电力电子与电力传动]