铁电钾钠铌酸锶钡薄膜电光性能的研究  

Electro-optic properties of potassium sodium strontium bariumniobate ferroelectric thin films

作　　者：康祥喆[1] 叶辉[1] 

机构地区：[1]浙江大学现代光学仪器国家重点实验室,杭州310027

出　　处：《物理学报》2006年第9期4928-4933,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60578012);浙江省自然科学基金(批准号:x405002)资助的课题.~~

摘　　要：采用溶胶_凝胶法在氧化镁单晶衬底上制备了符合化学计量比的完全填充型铁电钾钠铌酸锶钡(KNSBN)薄膜,通过X射线衍射,摇摆曲线,X射线Φ扫描,扫描电子显微镜等方法研究了薄膜的微结构,采用Adachi法研究了薄膜的电光特性.实验发现,KNSBN薄膜在氧化镁(001)单晶衬底上沿c轴外延生长,K+,Na+的引入有效地提高了薄膜的横向电光系数r51.成分为K0.2Na0.2Sr0.24Ba0.56Nb2O6,K0.2Na0.2Sr0.6Ba0.2Nb2O6,K0.2Na0.2Sr0.72Ba0.08Nb2O6的三种KNSBN薄膜的r51值分别为108.52pm/V,119.98pm/V,126.96pm/V,r51的数值随Sr2+含量增加而增大.Fully occupied ferroelectric （（KxNa1-x）0.4（SryBa1-y）0.8 , 0.50 〈 x 〈 0.75, 0.3 〈 y 〈 0.9, KNSBN） thin films with stoichiometric proportions have been successfully grown on MgO（001） substrate by the sol-gel process. Microstructure of the films was studied with X-ray diffraction, X-ray rocking curve, X-ray phi scan and scanning electron microscope. The electrooptic properties of KNSBN films were measured by the method of Adachi. It is found that the KNSBN thin films were c-axis epitaxially grown on MgO single crystal substrates. The transverse electro-optic coefficient r51 of KNSBN films can be greatly improved by introducing alkali metal ions, the measured values of transverse electro-optic coefficient r51 of K0.2 Na0.2 Sr0.24 Ba0.56 Nb2O6, K0.2 Na0.2 Sr0.6 Ba0.2 Nb2O6, K0.2 Na0.2 Sr0.72 Ba0.08 Nb2O6 are 108.52pm/V, l19.98pm/V, and 126.96pm/V, respectively. An enhancement of r51 with Sr^2＋ content in KNSBN films has been demonstrated.

关 键 词：横向电光系数 钾钠铌酸锶钡 外延生长 

分 类 号：O484.4[理学—固体物理]