高压下ZnS的电输运行为  

Electrical Transition Behavior of ZnS under High Pressure

作　　者：杨洁[1] 田红志[2] 韩永昊[3] 

机构地区：[1]空军航空大学基础部,长春130022 [2]吉林大学学报(信息科学版)编辑部,长春130012 [3]东南大学物理系,南京210096

出　　处：《吉林大学学报（理学版）》2006年第5期775-778,共4页Journal of Jilin University:Science Edition

基　　金：国家自然科学基金(批准号:10104008)

摘　　要：通过在金刚石对顶砧上集成以氧化铝薄膜为绝缘层的微型测量电路,原位测量了ZnS电阻率随压力的变化,证实ZnS的压致相变为半导体到半导体相变,而非金属化相变,并发现ZnS相变的可逆性与相变的迟滞现象.The resistance of ZnS was in-situ measured under high pressure by using integrated microcircuit on DAC with an alumina film as a insulating layer. It has been confirmed that the phase transition of ZnS is a semiconductor to semiconductor phase transition, not a semiconductor to metallic phase transition. The reversibility of the phase transition of ZnS is observed. In addition, the hysteresis of the phase transition of ZnS was found.

关 键 词：电输运 高压 ZNS 电阻率 

分 类 号：O521.21[理学—高压高温物理]