肖特基栅共振隧穿三极管(SGRTT)的器件模拟  

The Device Simulation of Schottky Gate Resonant Tunneling Transistor

作　　者：宋瑞良[1] 毛陆虹[1] 郭维廉[1] 梁惠来[1] 张世林[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《固体电子学研究与进展》2006年第3期290-294,共5页Research & Progress of SSE

基　　金：国家重点基础研究发展规划项目资助(2002CB311905);专用集成电路国家级重点实验室资助(51432010204JW1401)

摘　　要：使用Atlas软件模拟了肖特基栅共振隧穿三极管。通过改变发射极长度、栅极金属和上层AlAs势垒的距离以及靠近AlAs势垒的GaAs层浓度,得到器件耗尽区边界以及所对应的I-V特性,由此分析和解释了器件结构参数对器件特性的影响,最后对器件在电路中的应用予以说明。In this paper,Schottky gate resonant tunneling transistor has been simulated with Atlas software. By varying the length of the emitter,the distance between gate metal and the upper AlAs barrier and the doping concentration of GaAs near the AlAs barrier,we obtain the different I-V characteristics and depletion edge profiles of the device. Then,we analyze and explain the influence of structure parameters on the device characteristic. At the end of the paper,its application in the circuit is also described. Key words： Schottky gate resonant tunneling transistor; device

关 键 词：肖特基栅共振隧穿三极管 器件模拟 单稳-双稳转换逻辑电路单元 

分 类 号：TN313.2[电子电信—物理电子学] TN325.3