磁性随机存储器中的电流磁场分布模型  

An Analytical Expression of the Current Induced Magnetic Fields in Magnetic Random Access Memory

作　　者：张万里[1] 汤如俊[1] 张文旭[1] 彭斌[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《固体电子学研究与进展》2006年第3期307-311,共5页Research & Progress of SSE

基　　金：国家安全重大基础研究与发展项目(No.51310)

摘　　要：根据磁性随机存储器(MRAM)设计的实际需要,建立了MRAM中相互垂直的字线和位线电流所产生的磁场的解析分布模型。利用该模型讨论了存储单元与位线间距离(d1),字、位线宽度(w)及字、位线厚度(t)对存储单元自由层表面磁场分布的影响。结果表明,d1或w增大时,自由层表面磁场的强度及非均匀程度都减小。t增大时,自由层表面磁场的强度及非均匀程度都增大。其中d1对磁场分布的影响程序是最大的。该模型为MRAM更精确的器件模拟及器件结构的优化设计工作提供了必要的基础。An analytical expression of the current induced magnetic field in magnetic random access memory （MRAM） has been presented in this paper. The influences of the distance （all） between the bit line and the element, the width （w） and the thickness （t） of the word and bit line on the distributions of the magnetic fields on the surface of the free layer are discussed. The results show that both the strength and the non-uniformity of the magnetic fields on the surface of the free layer decrease when d1 or w increases. When t increases, both the strength and the nonuniformity of the magnetic field on the surface of the free layer increase. The influence of d1 on the distributions of magnetic fields is larger than those of w and t. The results provide a useful base for the optimization and a more precisely simulation of MRAM in the future work.

关 键 词：磁性随机存储器 字线 位线 磁场分布 

分 类 号：TN402[电子电信—微电子学与固体电子学]