氢敏材料的研究进展  

Research Progress of Hydrogen Sensitive Materials

作　　者：侯长军[1] 范小花[1] 范瑛[2] 唐一科[3] 

机构地区：[1]重庆大学化学化工学院,重庆400030 [2]中国工程物理研究院结构力学研究所,四川绵阳621000 [3]重庆大学机械传动国家重点实验室,重庆400030

出　　处：《电子元件与材料》2006年第10期1-5,共5页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(10376045);重庆市自然科学基金资助项目(8418)

摘　　要：按照不同工作原理,分别介绍了电化学型、半导体型和光学型3类氢敏材料的国内外研究进展;主要讨论了掺杂等改性方法对提高半导体型和光学型氢敏材料的选择性、灵敏度等方面的影响。展望了氢敏材料的发展方向。Introduced were the research progresses of three main hydrogen sensitive materials, including electrochemical type, semiconductor type and optical type sensitive materials, which were worded in different mechanisms. Mainly discussed were the effects of methods of changing properties（such as dopant） on promoting the sensitivity and selectivity of hydrogen sensitive materials. And the developing directions of sensitive materials in the future are also prospected.

关 键 词：电子技术 氢敏材料 综述 作用机制 改性方法 纳米薄膜 

分 类 号：TB383[一般工业技术—材料科学与工程]