Multi-active region laser diode with a narrow beam divergence angle  

作　　者：LI Jian-jun SHEN Guang-di CUI BI-feng ZOU De-su HAN Jun DENG Jun 

机构地区：[1]Beijing Optoelectronic Technology Laboratory, Bei]ing University of Technology, Beijing 700022, China

出　　处：《Optoelectronics Letters》2006年第5期326-328,共3页光电子快报（英文版）

基　　金：This work was supported by special foundations for major state basic research project of China(G20000683-02)

摘　　要：A novel large optical cavity laser diode,which consists of multi-active regions cascaded together through tunnel junctions,is proposed.After growing the epi-layers with LP-MOCVD system on GaAs substrate,the ridge waveguide laser structure is fabricated,and it shows a transverse divergence angle as low as 14.4°.

关 键 词：激光二极管 窄带 分散角 激光结构 

分 类 号：TN248.4[电子电信—物理电子学]