300#反应堆单晶硅掺杂质量控制  

Quality Control for Silicon Neutron Doping in SPRR-300

作　　者：陈炜[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900

出　　处：《原子能科学技术》2006年第B09期161-163,共3页Atomic Energy Science and Technology

摘　　要：300#反应堆在二十世纪80年代开始开展单晶硅掺杂，目前有6根管道用于硅样品辐照。通过对热中子注量计算和辐照中热中子注量监测的控制，得出目标电阻率命中率达到90％以上。采用旋转电机在辐照巾旋转硅样品的方法，控制硅样品径向掺杂的不均匀性小于5％，利用管道轴向中子注量率平坦区，并进行适当的位置调整，控制硅样品轴向掺杂的不均匀性小于5％。Silicon doping in SPRR-300 was begun in 1980s. There are 6 tubes for silicon irradiation now. Through calculating and monitoring curb of thermal neutron fluence, target resistivity hitting ratio is high than 90%. Through spinning the silicon sample during irradiation by a rotate electric motor, uneven proportion of radial doping is controlled below 5%. Through neutron fluence rate smooth area using and silicon sample position adjusting, uneven proportion of axial doping is also controlled below 5%.

关 键 词：300#反应堆 硅 掺杂 

分 类 号：TL99[核科学技术—核技术及应用]