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作 者:张宏梅[1] 游汉[2] 石家纬[1] 王伟[1] 马东阁[2] 谢静[3]
机构地区:[1]吉林大学光电子集成国家重点实验室,长春130012 [2]中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,长春130022 [3]空军航空大学军事仿真技术研究所装备仿真研究室,长春130022
出 处:《吉林大学学报(信息科学版)》2006年第5期457-461,共5页Journal of Jilin University(Information Science Edition)
基 金:国家重点基础研究发展规划"973"基金资助项目(2003CB314703);吉林省科技厅基础研究基金资助项目(20040520-1)
摘 要:有机电致发光器件的法布里-珀罗(Fabry-Perot)谐振腔的光学微腔效应,导致在一定波长处的发射峰强度增强、宽度压窄、发光性能得到改善,因而在有机彩色显示中受到人们的重视。设计了具有不同反射率的两种分布布拉格反射镜(DBR:D istributed B ragg Reflectors),用8羟-基喹啉铝(A lq3)作为电子传输/发光层,N,N′-双(1-萘基)-N,N′-二苯基-1,1′-二苯基-4,4′-二胺(NPB)作为空穴传输层,通过DBR与金属电极反射镜构成法布里-珀罗谐振腔制成了微腔有机发光二极管(MOLED:M icrocavity O rgan ic L ight-Em ittingD iode),详细研究了介质镜(DBR)的反射率、金属镜和有机层的厚度对电致发光效率、发光波长以及光谱半高宽的影响。研究发现,高反射率的DBR虽然可以实现窄的光谱发射,但器件的电致发光效率大大降低,而低反射率的DBR有利于实现单模发射,并且具有较高的电致发光效率,经金属镜和有机层厚度优化后的最大电致发光效率达到了8.3 cd/A,是高反射率DBR微腔器件的6.4倍。The organic electroluminescent microcavity effects which result in the enhanced peak, the narrowed FWHM ( Full Width of Half Maximum) of emission, and improved performances attract much attention in organic color display field. In this paper, DBR ( Distributed Bragg Reflectors ) with different reflectivities were designed and microcavity OLEDs (Organic Light-Emitting Diodes) based on tris (8-hydroxy-quinoline) aluminum (Alq3) as the electron-transporting/emitting layer and N, N'-di (naphthalene-1-yl) -N, N' -diphenyl- benzidine (NPB) as the hole-transporting layer sandwiched DBR mirror and metal electrode mirror as Fabry-Perot resonant cavity were fabricated. The effects of DBR reflectivity and the thickness of metal mirror and organic layer on electroluminescent (EL) efficiency, emissive wavelength and FWHM were investigated in detail. It was found that the DBR with a high reflectivity emits spectrum with narrow FWHM, but the EL efficiency is greatly low, whereas the DBR with low reflectivity not only emits single mode spectrum, but also improves significantly the EL efficiency. After optimizing the thicknesses of organic layer and metal cathode, the EL efficiency reached 8. 3 cd/A, which is enhanced by 6. 4 times compared with devices with low reflectivity DBR.
分 类 号:TN383.1[电子电信—物理电子学]
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