三氧化二铝掺杂物的特性及在MCVD中的应用  

Properties of Al 2O 3 Dopant and Its Application in MCVD

作　　者：丛熙盛 

机构地区：[1]赫尔辛基大学物理系

出　　处：《北方交通大学学报》1996年第5期533-537,共5页Journal of Northern Jiaotong University

摘　　要：阐述了三氧化二铝的特性和在ＭＣＶＤ中的应用．由于三氧化二铝掺杂在光纤中具有优于二氧化锗的一些特点，被应用于不同的领域，如光纤激光器、光纤放大器和保偏光纤．但由于受三氧化二铝易形成反三氧化二铝现象的限制，一直没有广泛用于普通光纤生产中．在前人研究成果和对制备工艺理解的基础上。In this report, the properties of Al 2O 3 dopant and its application in MCVD are described mainly on a basis of the previous papers. Due to use of Al 2O 3 in glass fiber as an alternative dopant to GeO 2, the several advantages were found and applied in different area such as fiber laser, amplifier and maintained polarization fiber. But due to limitation that Al 2O 3 dopant forms easier devitrification, Al 2O 3 are still not widely used in the conventional fiber production. Based on the previous achievements and understanding of fabrication process, I think that it is very necessary to exploit this new product.

关 键 词：三氧化二铝 掺杂物 光纤 MCVD 制备 

分 类 号：TQ342.82[化学工程—化纤工业] TN25[电子电信—物理电子学]