云纹干涉反转倍增法及其在微电子组件变形场测量中应用  

The Reverse Multiplicate Method of Moire Interferometry and Its Application to Measure Deformation of Microelectronics Package

作　　者：刘宝琛[1] 史训清[1] 

机构地区：[1]清华大学

出　　处：《实验力学》1996年第4期480-486,共7页Journal of Experimental Mechanics

基　　金：国家自然科学基金

摘　　要：本文提出并介绍了云纹干涉反转倍增法，该方法将光学载波、反转剪切、富立叶变换倍增技术巧妙地结合于云纹干涉光路中。利用载波频率，把带载波的云纹干涉变形图在富立叶变换系统中进行条纹倍增，而试样变形信息也倍增了相同倍数，将云纹干涉的测量灵敏度又提高了一个数量级。在实验中实现了１６倍倍增，即位移测量灵敏度由０．４μｍ提高到０．０２５μｍ（虚栅频率１／２４００）。将这一方法用于测量热载下金属Ｎｉ膜／ＺｒＯ２陶瓷基界面裂纹尖端面内位移场，分析裂尖位移奇异性。实验表明：热载作用下，膜／基组件界面裂纹尖端的位移奇异性具有指数奇异特性，其奇异性指数与膜／基材料。The reverse multiplicate technique of moire interferometry is introduced .This is a very high sensitive method.In this method,shear reverse technique,carrier wave technique,multiplicate technique and optical Fourier processing technique are combined cleverly and applied successfully to the moire interferometry.When the deformed patterns of moire interferometry with carrier wave are multiplied using carrier wave frequency which is filtered on an optical Fourier processing system,the deformed in formation of the specimen are multiplied sucessfully at same time.As a final experimental result,the moire fringes are multiplied clearly by 16 times,and measuring displace mentsensitivity is increased from 0.4μm to 0.025μm(In this test,specimen grating pitch is 1/1200mm).This method is applied to measure in plane displacement fields around an interlayer crack tip of metal Ni/ceramic ZrO 2 substrate under different thermal loading.From experiment alfields,the strain fields around interlayer crack-tip can be obtained as well.The displace ment singularity of interlayer crack tip under thermal loading is an exponential singularity related with the material properties of the specimen.

关 键 词：反转倍增 云纹法 膜/基组件 微电子组件 

分 类 号：TN307[电子电信—物理电子学] O348.12[理学—固体力学]