SPS法制备四元合金Zn_xBi_(0.5)Sb_(1.5-x)Te_3(x=0.05～0.4)的微观结构与电学性能  

Microstructures and Electrical Properties of Quaternary Zn_xBi_(0.5)Sb_(1.5-x)Te_3(x=0.05～0.4) Alloys Prepared by Spark Plasma Sintering

作　　者：崔教林[1] 徐雪波[1] 杨炜[1] 

机构地区：[1]宁波工程学院机械工程学院,浙江宁波315016

出　　处：《稀有金属材料与工程》2006年第9期1475-1478,共4页Rare Metal Materials and Engineering

基　　金：浙江省自然科学基金(Y404321);宁波市博士基金(2003A62008)资助

摘　　要：采用放电等离子火花烧结法(SPS)制备四元ZnxBi0.5Sb1.5-xTe3(x=0.05～0.4)(摩尔分数,下同)合金,得出当Zn的量为0.05时,材料的电导率出现最大值,室温附近其值为2.5×104?-1·m-1,大约是三元Bi0.5Sb1.5Te3合金的1.35倍。在同温度下,功率因子p值也取得最大值(1.65×10-3W·m-1·K-2),而三元Bi0.5Sb1.5Te3合金的功率因子p值为1.35×10-3W·m-1·K-2。在该合金中用Zn替代Sb元素后,合金的微结构逐渐随Zn的含量发生变化。The microstructures and electrical properties of p-type quaternary ZnxBi0.5Sb1.5-xTe3（x=0.05-0.4） alloys through substitution of Zn for Sb, fabricated by spark plasma sintering technique, were investigated. The results revealed that the crystal constants are directly related to the Zn content, i.e. free carrier concentration （holes） that is critical to determine the electrical properties The electrical conductivity （tr） of 2.5×10^4Ω^-1·m^-1 for the alloy ZnxBi0.5Sb1.5-xTe3 （x=0.05） was obtained near room temperature, being about 1.35 times that of ternary Bi0.5Sb1.5Te3 alloy. The power factor （p） of （1.65×10^-3W·m^-1·K^-2 was achieved near room temperature, whilst that of typical ternary Bi0.5Sb1.5Te3 alloy is 1.35×10^-3W·m^-1·K^-2.

关 键 词：四元ZnxBi0.5Sb1.5-xTe3(x=0.05-0.4)合金 SPS 微结构 电学性能 

分 类 号：TN304[电子电信—物理电子学]