Co／Ti非晶多层膜晶化过程中结构及磁性的变化  

EVOLUTION OF STRUCTURE AND MAGNETIC PROPERTIES DURING CRYSTALLIZATION OF AMORPHOUS Co/Ti MULTILAYER FILMS

作　　者：吴萍[1] 姜恩永[1] 刘裕光[1] 王存达[1] 

机构地区：[1]天津大学,天津大学应用物理系

出　　处：《金属学报》1996年第11期1209-1214,共6页Acta Metallurgica Sinica

基　　金：国家自然科学基金;北京中关村地区联合测试中心基金

摘　　要：利用双对向靶溅射方法在室温下制备Ｃｏ／Ｔｉ非晶多层膜，并采用原位退火透射电镜和原位热重法，观测了Ｃｏ／Ｔｉ多层膜结构与磁性随温度的变化，结果表明：退火温度ｔａ为４００℃时，薄膜开始晶化，Ｃｏ，Ｔｉ颗粒析出并粗化；ｔａ＞６００℃时，具有铁磁性的Ｃｏ单质完全消失，全部转化为Ｃｏ２Ｔｉ相．热磁测量在３９０及５２０℃附近出现了两个明显的磁性转变峰，与薄膜结构变化对应．适当温度（４００—５２０℃）的退火可获得高饱和磁化强度的Ｃｏ－Ｔｉ颗粒膜．The Co / Ti multilayer thin films with an amorphous microstructure are prepared by dual facing target sputtering (DFTS) at room temperature. The evolution of the microstructure and magnetization in Co / Ti multilayer thin film during annealing has been investigated by in situ saturation magnetization measurements and the conventional transmission electron microscopy (TEM). Annealing results showed that crystalline Ti precipitated at 400℃ and Co at 500℃. Increasing temperature resulted in the coarsening of Co precipitates and the simultaneous growth of Ti grains. At temperature of about 600℃, Co phase disappeared and Co2Ti phase formed. The thermal magnetic measurement result also shows two clear magnetic changes at 390 and 520℃ respectively, corresponding to the changes in the microstructure of the film. The Co-Ti magnetic granular films can be obtained by annealing at moderate temperature.

关 键 词：Co/Ti多层膜 非晶 晶化 薄膜 磁性 

分 类 号：O484.4[理学—固体物理]