CMOS偏置电流基准源的两级温度补偿方法  

CMOS Bias Current Reference with Two-Stage Temperature Compensation

作　　者：蔺增金[1] 杨海钢[1] 

机构地区：[1]中国科学院电子学研究所传感技术国家重点实验室

出　　处：《微电子学》2006年第5期630-633,637,共5页Microelectronics

基　　金：国家自然科学基金重大研究计划重点项目"生物微传感集成化芯片系统基础研究"(90307014)资助

摘　　要：提出了一种利用分支电流的正、负温度系数（TC）进行两级温度补偿的新型设计方法，并用标准CMOS工艺实现了一个20μA电流偏置基准源。其结构简单，各参数匹配要求较低，且具有多项参数的设计灵活性，详细探讨了两级温度补偿参数间的各种关系，并给出了相应的解析表达式。电路还包含自启动电路，可避免零电流工作状态的出现。经特许半导体公司0．35μm2P4M工艺流片，芯片测试结果表明，在0-120℃范围内，其温度系数达35.63ppm/℃。A low temperature-dependent 20 μA current reference was implemented in standard CMOS process, which uses two-stage temperature compensation with two branch currents having positive and negative temperature coefficients respectively. The circuit is very simple in structure and flexible in design, with added parameters for fine adjustment. The analytical relationship among the design parameters is deduced in detail. The start-up circuit is used to avoid zero current state. The proposed current reference circuit was fabricated in Chartered Semiconductor＇s 0. 35μm CMOS process. Test results show that the temperature coefficient of the chip reaches 35.63 ppm/℃ within temperature range from 0℃ to 120℃.

关 键 词：电流基准源 两级温度补偿 温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]