超宽带CMOS低噪声放大器的设计  

Design of an Ultra-Wideband CMOS Low Noise Amplifier

作　　者：罗志勇[1] 李巍[1] 任俊彦[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海201203

出　　处：《微电子学》2006年第5期688-692,共5页Microelectronics

基　　金：部委基金资助项目(51408060905JW0702)

摘　　要：设计了一种应用于3．1～5．2GHz频段超宽带系统接收机的差分低噪声放大器，采用前置切比雪夫（Chebyshev）2阶LCladder带通滤波器的并联负反馈结构，详细分析了其输入宽带阻抗匹配特性和噪声特性。仿真基于TSMC0．18μmRFCMOS工艺。结果表明，在全频段，电路功率增益S21为11dB，增益平坦度小于1dB，最小噪声系数为3．5dB，输入输出均良好匹配，在1．8V电源电压下，功耗为14．4mW。A differential low noise amplifier（LNA） is presented, which is designed for an ultra-wideband（UWB） receiver working at 3. 1-5.2 GHz, with a 2hal-order Chebyshev LC ladder band-pass filter in the front of shunt feedback topology. More efforts are made on the design of the wideband characteristics of the input matching and noise of the core circuit. Based on simulation with TSMC＇s 0.18μm RF CMOS process, the circuit achieves a power gain of 11 dB with less than 1 dB gain flatness over the full working band, a minimum noise figure of 3.5 dB and good impedance matchings both at input and output while consuming 14. 4 mW from a 1.8 V power supply.

关 键 词：超宽带 低噪声放大器 并联负反馈 切比雪夫滤波器 

分 类 号：TN722.3[电子电信—电路与系统]