1．3—1．55μm　GeSi异质结红外探测器的研制  

Fabrication of GeSi Heterojunction Infrared Detectors with Wavelength of 1. 3-1. 55μm

作　　者：江若琏[1] 顾书林[1] 江宁[1] 李钊 徐军[1] 郑有枓 许培英[1] 

机构地区：[1]南京大学物理系,南京大学电子科学与工程系

出　　处：《高技术通讯》1996年第11期13-15,共3页Chinese High Technology Letters

基　　金：863计划

摘　　要：采用快速加热、超低压化学气相淀积方法，在（ｎ）－Ｇｅ衬底上外延生长（ｐ）－ＧｅＳｉ－Ｓｉ薄层，首次研制成功了１．３—１．５５μｍ波段的ＧｅＳｉ异质结红外探测器。其主要参数性能优于该波段的同类型Ｇｅ探测器。Ge-based GeSi heterojunction infrared detectors with wavelength of 1. 3-1. 55μm were fabricated for the first time. The (p)-GeSi-Si epitaxial thin layers of these detectors were grown on (n)-Ge substrates by Rapid Thermal Process/ Very Low Pressure-CVD. Measurements indicated that the prime Parameters of the detectors are better than Ge infrared detectors.

关 键 词：GeSi异质结 红外探测器 制造 

分 类 号：TN215[电子电信—物理电子学]