半导体可饱和吸收镜调Q的Yb∶LSO激光器  

Laser Diode-Pumped Q-Switched Yb∶LSO laser with a Semiconductor Saturable Absorber Mirror

作　　者：宋晏蓉[1] 胡江海[1] 周劲峰[1] 赵广军[2] 严成锋[2] 苏良碧[2] 徐军[2] 郭凯[1] 张志刚[1] 

机构地区：[1]北京工业大学应用数理学院,北京100022 [2]中国科学院上海光学精密机械研究所,上海201800

出　　处：《中国激光》2006年第10期1297-1300,共4页Chinese Journal of Lasers

基　　金：北京市优秀人才基金(20041D0501511);北京市教委基金(KM200610005004);国家杰出青年基金(60425516);国家重点基础研究项目(G1999075201-2)资助课题

摘　　要：报道了一个激光二极管（LD）抽运多波长连续输出的激光器和一个被动调Q的固体激光器。该激光器的增益材料是一种新型掺Yb^3＋的晶体Yb^3＋：Lu2SiO5（Yb^1LSO）。当吸收的抽运功率为2．57W时，连续输出的最大功率为490mW，斜率效率为22．2％，光-光转换效率为14．2％，激光阈值为299mW，输出激光波长为1084nm。多波长输出时，波长调谐范围为1034～1085nm。利用InGaAs可饱和吸收镜实现调Q输出时，斜率效率为3．0％，激光波长为1058nm。脉冲重复频率为25～39kHz，重复频率随着抽运功率的增加而增加。New Yb-doped crystal Yb^3＋： Lu2SiO5 （Yb： LSO） lasers pumped by diode-laser at 976 nm with passively Q-switched and multi-wavelength continuous-wave （CW） output were demonstrated. The maximum CW output power was 490 mW with the absorbed pump power of 2.57 W. The slope efficiency and optical-optical conversion efficiency were 22.2% and 14.2% respectively. The threshold was 299 mW, and the laser wavelength was 1084 nm. The wavelength could be tunable from 1034 to 1085 nm with a prism. For the Q-switched output, the laser operated at 1058 nm with an InGaAs semiconductor saturable absorber mirror （SESAM）. The Q-switched output slope efficiency of 3.0% with the maximum absorbed pump power of 1.73 W was also obtained. The pulse repetition rate was 25～39 kHz and was increased with the pump power increased.

关 键 词：激光器 半导体可饱和吸收镜调Q 激光材料 半导体抽运 

分 类 号：TN248.1[电子电信—物理电子学]