Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si_(1-x)Ge_(x) Layer Epitaxied on Si Substrate  被引量:1

Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si_(1-x)Ge_x Layer Epitaxied on Si Substrate

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作  者:Lei ZHAO Yuhua ZUO Buwen CHENG Jinzhong YU Qiming WANG 

机构地区:[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China

出  处:《Journal of Materials Science & Technology》2006年第5期651-654,共4页材料科学技术(英文版)

基  金:This work is supported by the National Natural Science Foundation of China (Grant Nos. 60336010 & 90401001);973 Program (Grant No. TG 2000036603);the Student Innovation Program of CAS (No. 1731000500010).

摘  要:It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.

关 键 词:Si1-xGex Ge content Composition determination Double crystals X-ray diffraction (DCXRD) Micro-Raman measurement 

分 类 号:O657.3[理学—分析化学]

 

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