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作 者:Lei ZHAO Yuhua ZUO Buwen CHENG Jinzhong YU Qiming WANG
出 处:《Journal of Materials Science & Technology》2006年第5期651-654,共4页材料科学技术(英文版)
基 金:This work is supported by the National Natural Science Foundation of China (Grant Nos. 60336010 & 90401001);973 Program (Grant No. TG 2000036603);the Student Innovation Program of CAS (No. 1731000500010).
摘 要:It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.
关 键 词:Si1-xGex Ge content Composition determination Double crystals X-ray diffraction (DCXRD) Micro-Raman measurement
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