波导存储器侧面散射特性的实验研究  

Experiments on Side-scattering Properties of the Waveguide Memory

作　　者：杨涛[1] 梁忠诚[2] 陈家璧[3] 庄松林[3] 

机构地区：[1]南京邮电大学数理学院,江苏南京210003 [2]南京邮电大学光电工程学院,江苏南京210003 [3]上海理工大学光学与电子信息工程学院,上海200093

出　　处：《光电子．激光》2006年第10期1166-1168,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60377006);上海市科学技术发展基金资助项目(036105033)

摘　　要：通过实验,研究了波导存储器的侧面散射特性。采用激光直写法在聚合物薄膜表面刻录光散射点阵,通过移动狭缝与表面的相对位置测量薄膜的侧面散射光分布。结果表明,波导侧面散射光强沿传导光传播方向的分布呈指数衰减规律,其衰减常数与信息符密度成正比,并随记录信息所用的激光束能量的加大而增长。实验结果有助于优化波导存储器信息符的密度和大小,有利于提高波导存储器的能量利用率、读出灵敏度和信噪比(SNR)。The side-scattering properties of the waveguide memory have been investigated by experiments in this paper. The results indicate that the side-scattering intensity decays exponentially along the propagating direction of the guide light. The attenuation constant is in proportion to the density of the scattering dots,and also increased with the laser beam energy that records the information dots. These experimental results contribute to optimize the density and size of the information dots, which leads to better scattering distribution of the information dots on the waveguide surface. Better sensitivity of the readout system of the memory, more SNR and higher utilizing efficiency of the laser energy can also be achieved by these optimizations.

关 键 词：光存储 波导存储器 光散射 

分 类 号：TN252[电子电信—物理电子学]