一种二维近红外枕形Si基位置敏感探测器研制  

Fabrication of a New Two Dimensional Near Infrared Pincushion Silicon Based Position Sensitive Detector

作　　者：戚巽骏[1] 林斌[1] 陈浙泊[1] 曹向群[1] 陈钰清[1] 

机构地区：[1]浙江大学现代光学仪器国家重点实验室浙江大学国家光学仪器工程技术研究中心

出　　处：《光电子．激光》2006年第10期1208-1211,1232,共5页Journal of Optoelectronics·Laser

摘　　要：建立一种新的Si基位置敏感探测器(PSD)光生电流理论模型,导出了PSD的光生电流、光谱灵敏度的表达式;研究了PSD光敏面各层厚度和SiO2薄膜厚度对PSD波长响应灵敏度的影响,认为p层的厚度主要影响PSD在短波段的响应度,而耗尽层对PSD的中长波响应有着很大的影响;设计并制造了二维近红外枕形PSD,对其进行实际测试,其光谱响应峰值波长为920 nm,灵敏度达到0.626 A/W。A new photoelectric model of silicon based position sensitive detector（PSD） is built and the formulas of the photocurrent and spectral response are gotten with it. The effect of every layer thickness and SiO2 thickness on the spectral response is analysed and calculated. The spectral response of PSD is affected by the thickness of p layer mainly at short wavelength and by the thickness of the depletion layer mainly at long wavelength. With the results,a new silicon based near infrared 2-D pincushion PSD is designed and fabricated. The experimental results show that the peak spectral sensitivity of our device is 0. 626 A/W at 920 nm wavelength.

关 键 词：位置敏感探测器(PSD) 近红外 PN结 光谱响应 

分 类 号：TH703.2[机械工程—仪器科学与技术]