退火温度对PVDF薄膜结构的影响及其性能研究  

Study on influence of anneal temperature on PVDF films and their performance

作　　者：仝金雨[1] 姜胜林[1] 刘栋[1] 金学淼[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《功能材料》2006年第10期1569-1571,共3页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(2004CB619300);新世纪优秀人才支持计划资助项目(NCET-04-0703)

摘　　要：通过拉伸工艺,在不同的退火温度下,制备了PVDF薄膜,用XRD分析了退火温度对拉伸PVDF薄膜β相含量的影响。实验结果表明,退火温度为120℃时,β相的含量达到最大值,薄膜呈现明显的铁电性,矫顽场接近1.0mV/cm,电位移D为5μC/cm2。在25℃时,薄膜的热释电系数p为0.3×10-8C/cm2.K。In this paper, PVDF films were prepared by uniaxial stretching under different anneal temperature. The technique of XRD was used to analyze the quantity of the β phase in the PVDF films annealed under different temperature. It shows that the quantity of the β phase reaches to the maximum when the anneal temperature is at 120℃. At this time, the PVDF films have obvious ferroelectric properties, the coercive filed is close to 1.0 mV/cm, electric displacement is 5μC/cm^2. The pyroelectric coefficient is 0.3×10^-8C·cm^-2· K^-1 at 25℃.

关 键 词：PVDF 热释电性 铁电性 

分 类 号：TG215.7[金属学及工艺—铸造]