面向膜电极的选择性生成纳米级多孔硅技术的研究  

Investigation of Selectively Forming Nano-Porous Silicon for the application of MEA

作　　者：王温静[1] 王晓红[1] 姜英琪[1] 胡小龙[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《传感技术学报》2006年第05A期1477-1480,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金项目资助(90207023)

摘　　要：研究了面向微型燃料电池膜电极的多孔硅薄膜的制备工艺.多孔硅刻蚀工艺高效便宜,与标准CMOS工艺兼容.通过选择不同的衬底掺杂浓度和适当的电解液浓度能控制纳米(或微米)级多孔硅的孔径大小,得到适用于膜电极的纳米级孔径的多孔硅薄膜,证实了纳米级多孔硅可用于硅微燃料电池中膜电极的可能性.Study of the formation of porous silicon is performed. The porous wafers are produced by deep anodic etching which is a very effective and cheap fabrication method compatible to standard Si CMOS fabrication technology. The density of nano- （and micro-） pores can be varied in a wide range by choice of substrate doping level and appropriate electrolyte solution. Therefore the nano-porous silicon membrane is obtained, demonstrating the possibility of the use of nano-porous silicon as a proton electrolytic membrane （PEM） material for micro-fuel cell applications.

关 键 词：多孔硅 微型燃料电池 膜电极 

分 类 号：TN304.05[电子电信—物理电子学]