Pure and stable white organic light-emitting device with an ultra-thin layer  

作　　者：HAO Jingang DENG Zhenbo 

机构地区：[1]Key Laboratory of Luminescence and Optical Information, Ministry ofEducation, Institute of Optoelectronic Technology, Beijing JiaotongUniversity, Beijing 100044, China

出　　处：《Chinese Science Bulletin》2006年第19期2301-2303,共3页

基　　金：This work was supported by the National Natural Science Foundation of China(Grant No.90201004);Beijing Science and Technology Foundation(Grant No.H030430020410).

摘　　要：An ultra-thin (3 nm) hole blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was inserted between the electron-transport layer of 8-hydroxyquinoline aluminum (Alq3) and 4-(dicyan- omethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9- enyl)-4H-pyran (DCJTB) doped poly-vinylcarbazole (PVK) layer. The device structure was ITO/PVK: DCJTB(0.25 wt%)/BCP(3 nm)/Alq3(8 nm)/Al. Because the thickness of BCP was on the scale of Forster energy transfer critical radius, incomplete energy transfer would occur from PVK to Alq3 and then from Alq3 back to DCJTB through BCP layer. Furthermore, BCP can block a hole from migrating ahead, and thus confine excitons formed in the emission layer. The optimized device gives pure and voltage-independent emission. The CIE coordinate was kept at (0.32, 0.32), and the brightness reached 270 cd/m2 at 18 V with the efficiency of 0.166 cd/A.An ultra-thin （3 nm） hole blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline （BCP） was inserted between the electron-transport layer of 8-hydroxyquinoline aluminum （Alq3） and 4-（dicyanomethylene）-2-t-butyl-6（1,1,7,7-tetramethyljulolidyl-9- enyl）-4H-pyran （DCJTB） doped poly-vinylcarbazole （PVK） layer. The device structure was ITO/PVK： DCJTB（0.25 wt%）/BCP（3 nm）/Alq3（8 nm）/Al. Because the thickness of BCP was on the scale of Forster energy transfer critical radius, incomplete energy transfer would occur from PVK to Alq3 and then from Alq3 back to DCJTB through BCP layer. Furthermore, BCP can block a hole from migrating ahead, and thus confine excitons formed in the emission layer. The optimized device gives pure and voltage-independent emission. The CIE coordinate was kept at （0.32, 0.32）, and the brightness reached 270 cd/m^2 at 18 V with the efficiency of 0.166 cd/A.

关 键 词：OLED 白色发光二极管 超薄层 能量转变 邻二氮杂菲 

分 类 号：TN312.8[电子电信—物理电子学]