凝胶中络合物浓度分布对CuI晶体生长的影响  被引量:2

INFLUENCE OF COMPLEX CONCENTRATION DISTRIBUTION IN GEL ON CuI CRYSTAL GROWTH

在线阅读下载全文

作  者:顾牡[1] 李益峰[1] 汪大祥[1] 刘小林[1] 徐荣昆[2] 黎光武[3] 欧阳晓平[4] 

机构地区:[1]同济大学波耳固体物理研究所波与材料微结构实验室,上海200092 [2]中国工程物理研究院核物理与化学研究所,四川绵阳621900 [3]中国原子能研究院核物理研究所,北京102413 [4]西北核技术研究所,西安710024

出  处:《硅酸盐学报》2006年第9期1070-1074,共5页Journal of The Chinese Ceramic Society

基  金:国家自然科学基金(10476018;10475068)资助项目;教育部高等学校优秀青年教师教学科研奖励计划[教人司(2002)123];西北核技术研究所专项科研基金(0412003)资助项目

摘  要:采用改进的浓度控制的络合解络法在硅凝胶中生长出形状规则的CuI单晶。通过分光光度法测量铜离子浓度,分析了硅凝胶中络合物浓度和浓度梯度对晶体生长的影响。实验发现:要获得形貌规则且尺寸较大的CuI单晶,在晶体生长区必须维持一个低而稳定的络合物浓度和浓度梯度。就浓度递减法而言,生长区的浓度和浓度梯度一般可分别控制在0.01~0.03mol/L范围和0.012mol/(L·cm)左右,这样生长区的过饱和度可以维持在一个使晶体缓慢生长的水平。为更好地调控凝胶中络合物的浓度分布,通过浓度递增法研究了络合物的扩散规律,得到其平均扩散系数为1.521×10-5cm2/s,这一结果可为实验方案的进一步优化提供依据。CuI single crystal was grown in silica gel using the decomplexation method modified by concentration programming. The influence of the concentration and gradient of CuI·H1 complex in silica gel on the crystal growth was studied by measuring the concentration of copper ions with spectrophotometry. The results show that it is necessary to maintain low and stable values of both the concentration and its gradient of the complex, in order to grow a Cul single crystal with a regular shape and large size. When the concentration of feed solution was decreased successively, the concentration and its gradient of the complex in the region of crystal growth had to be controlled in the range of 0.01-0.03 mol/L and at about 0.012 mol/(L·cm) respectively, so that the supersaturation of the Cul·HI complex could be kept at a value that could allow the Cul crystal to grow gradually. In order to control the variation of the concentration of Cul·HI complex in gel, the diffusion rule of the complex was studied by increasing the concentration of the feed solution. The average diffusion coefficient was calculated as 1.521×10^-5cm^2/s. The results indicate that this could prove to be a useful method for optimizing experimental procedures.

关 键 词:碘化亚铜 晶体生长 络合解络法 浓度控制 扩散规律 

分 类 号:O78[理学—晶体学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象