SiO-Au法制备硅纳米线  

Silicon Nanowires Produced by SiO-Au Method

作　　者：潘国卫[1] 

机构地区：[1]浙江大学物理系,杭州310027

出　　处：《物理化学学报》2006年第9期1147-1150,共4页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(50272057)资助项目

摘　　要：在低真空的CVD系统中直接热蒸发SiO粉末并以金为催化剂在硅衬底上制备出大量长达几十微米的硅纳米线(SiNWs),通过X射线衍射谱(XRD)、场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)、选区电子衍射仪(SAED)和Raman光谱等技术对硅纳米线进行形貌及结构分析.实验结果表明,在不同生长温度下制备得到的硅纳米线质量不同,其中在700℃温区生长的硅线质量最好;与晶体硅Raman的一级散射特征峰(TO)520.3cm-1相比,纳米硅线的Raman特征峰(TO)红移至514.8cm-1.Large-scale silicon nanowires （SiNWs）, which consist of a crystalline silicon core and a thick oxide shell with a length of tens of micrometers, were synthesized by evaporation of silicon monoxide （SiO） using a gold-coated silicon wafer as substrate in a low vacuum CVD system. The morphology and structure of the nanowires were inspected and analyzed by X-ray diffraction（XRD）, field-emission scanning electron microscopy （FESEM）, transmission electron microscopy （TEM）, selected electron diffraction （SAED）, and Raman spectroscopy. The experimental results indicated the quality of silicon nanowires （SiNWs） varied with different growth temperatures, and it was found that the SiNWs produced at 700℃ zone had a well-crystallized structure. Compared with the Raman peak of the first-order transverse optical phonon mode （TO） at 520.3 cm^-1 for bulk silicon, the corresponding peak for as-grown SiNWs redshifted to 514.8 cm^-1.

关 键 词：SiO-Au法 硅纳米线(SiNWs) 制备 

分 类 号：TB383.1[一般工业技术—材料科学与工程] O613.72[理学—无机化学]