用射频磁控溅射法在c-BN晶体基底上生长c-BN薄膜  

Growth of Cubic Boron Nitride Thin Film on c-BN Crystal Substrate by RF Magnetron Sputtering

作　　者：杨大鹏[1] 赵永年[1] 李英爱[1] 苏作鹏[1] 杜勇慧[1] 吉晓瑞[1] 杨旭昕[1] 宫希亮[1] 张铁臣[1] 

机构地区：[1]吉林大学超硬材料国家重点实验室,长春130023

出　　处：《人工晶体学报》2006年第5期953-957,共5页Journal of Synthetic Crystals

摘　　要：本文用射频磁控溅射方法在片状c-BN晶体基底上生长了c-BN薄膜,显微拉曼光谱(μ-RS)和扫描电子显微镜(SEM)测试结果表明:沉积的薄膜是大约10μm厚、高结晶性、电子透明的高纯c-BN薄膜。岛状和层状生长模式在试验中清晰的展示出来。同时在生长的c-BN薄膜内部和被遮盖的基底部分上发现了籽晶。Cubic boron nitride （c-BN） films were deposited on highly-oriented （ 111 ） bulk c-BN crystal by radio frequency （RF） magnetron sputtering method. The grown films were characterized by microRaman spectroscopy （μ-RS） and scanning electron microscopy （SEM）. The results show that the high crystallization,electron transparent c-BN film was obtained and its thickness was about l0μm. Island and step growth models were clearly shown. At the same time, same crystallites were detected both within the film and on the covered substrate.

关 键 词：高结晶度 生长速率 生长模式 

分 类 号：O78[理学—晶体学]