Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films  

作　　者：顾豪爽 张凯 胡光 李位勇 

机构地区：[1]State Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062

出　　处：《Chinese Physics Letters》2006年第11期3111-3114,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 50572026, and the Wuhan Key Technology Project under Grant No 20061002073.

摘　　要：Thin film bulk acoustic resonators are fabricated by using silicon bulk micromachining technology, which are constructed mainly from aluminium nitride （AlN） piezoelectric films. The results of x-ray diffraction, scanning electron microscopy and atomic force microscopy show that the AlN films exhibit highly c-axis orientation with good surface morphology. The resonators with the AlN films possessed a reflection coefficient -10.6 dB at the resonant frequency 2.537 GHz, an effective electromechanical coupling coefficient 3.75%, series quality 101.8, and parallel quality 79. 7.Thin film bulk acoustic resonators are fabricated by using silicon bulk micromachining technology, which are constructed mainly from aluminium nitride （AlN） piezoelectric films. The results of x-ray diffraction, scanning electron microscopy and atomic force microscopy show that the AlN films exhibit highly c-axis orientation with good surface morphology. The resonators with the AlN films possessed a reflection coefficient -10.6 dB at the resonant frequency 2.537 GHz, an effective electromechanical coupling coefficient 3.75%, series quality 101.8, and parallel quality 79. 7.

分 类 号：O484[理学—固体物理]