Al-Mg-Si合金GP区的原子键络与强化作用  

Atomic Bonding and Strengthening Effection of GP Zones in Al-Mg-Si Alloy

作　　者：高英俊[1] 王庆松[1] 王娜[1] 

机构地区：[1]广西大学物理科学与工程技术学院

出　　处：《矿冶工程》2006年第5期89-91,共3页Mining and Metallurgical Engineering

基　　金：国家自然科学基金资助项目(50061001);广西科学基金资助项目(桂科基0342004-1);广西"十百千人才工程"项目(2001207)

摘　　要：运用固体经验电子理论,对A l-Mg-S i合金GP区(L10型)价电子结构进行了计算,结果表明:L10型GP区的最强键与次强键比基体最强键强很多,其主键络骨架对合金键络起到增强作用;而其相邻的(111)晶面上的共价键络较强,使得该面滑移时较基体更困难,从而起到提高合金硬度的作用。The valence electron structures of GP zones with model L10 in A1-Mg-Si alloy were calculated according to the empirical electron theory（EET） in solid. The results show that the strongest and second strongest bonds of GP zones with model L10 are much stronger than that of A1 matrix, and its primary bond-net framework can strengthen the matrix. The stronger atomic bonding of the adjacent（ 111 ） crystal face of GP zones cause more difficulty of its relative slippage, which results in higher hardness of alloy.

关 键 词：Al—Mg—Si合金 GP区 共价键络 

分 类 号：TG111[金属学及工艺—物理冶金]